THERMODYNAMIC MODELLING OF THE EXCESS GIBBS ENERGY AND ASSESSMENT OF THE TERNARY SYSTEM (GA-P-IN)

Laboratoire d’Etude Physico-Chimique des Matériaux (LEPCM)

Physics Department, Faculty of Science, University of Batna, Algeria

Three semiconductor binary systems (Ga-P), (P-In) and (Ga-In) were optimized, using

CALPHAD method and the polynomial Redlich-Kister model to describe the Gibbs energy of

the liquid phase. Together with published data on (GaP-PIn) pseudobinary system, isothermal

sections of the ternary (Ga-P-In) system have been calculated by the Muggianu

extrapolation formula. The calculated binary phase diagrams and the isothermal sections are

in a good agreement with the experimental data.