ANALYSIS AND DESIGN OF LIGHT EMITTING DIODES FOR OPTOELECTRONIC APPLICATIONS

 للكاتبين :

El-Sayed A. M. Hasaneen1, Mohamed Moness2, and Mohamed Sabry3

1Electrical Engineering Department, Faculty of Engineering, El-Minia University, El-Minia

2Computer and system Engineering Dept., Faculty of Engineering, El-Minia University, El-Minia

3Electrical Engineering Department, Faculty of Engineering, Al-Azhar University, Qena

ABSTRACT

This paper presents detailed analysis and design of light-emitting diodes for optoelectronic applications.

Both internal and external efficiencies are investigated taking into account the nonradiative

recombination process and the total internal reflection. The dependency of the LED output power on

the efficiency and double pass parasitic absorption is studied. Effect of the temperature variation on the

LED performance is also studied. A complete design of an encapsulated LED operating at 1.55 μm has

been investigated. The design illustrates layer structures and thickness, material compositions, and

index of refraction. The results show that decreasing the radiation recombination time increases the

quantum efficiency. The quantum efficiency increases from 15% to 70% as the radiative recombination

time reduced from 0.5 μs to 0.05 μs. It is also shown that increasing the width of the active region

increases the output power.

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